Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

As the manufacturing process level of semiconductor devices continues to improve, device size gradually decreases, and are affected by single event effect more severely. In this paper, physical particle incident N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET) is simulated. By changing incidence position, angle, LET value, temperature, transient current variation with time obtained, susceptibility under action four factors analyzed, which provides basis for next research against ideas radiation hardening devices. addition, in these experiments, there were bimodal-shaped pulses that different from peak pulses. Therefore, a new model describing bimodal (SET) waveform was proposed, can be used as source circuit simulation help predict ability resist effect.